STPS10L45CR 查看數據表（PDF） - STMicroelectronics
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STPS10L45CR Datasheet PDF : 10 Pages
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STPS10L45C
Characteristics
Figure 1.
Average forward power
dissipation versus average
forward current (per diode)
Figure 2.
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
3.5
3.0
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
IF(AV)(A)
6
5
2.5
4
2.0
δ=1
3
1.5
2
1.0
T
0.5
1
IF(AV)(A)
δ=tp/T
tp
0.0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0
T
δ=tp/T
25
tp
50
Rth(j-a)=Rth(j-c)
TO-220AB / D2PAK / I2PAK
TO-220FPAB
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.001
0.01
0.1
0.4
tp(µs)
0.2
Tj(°C)
0
1
10
100
1000
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB, I2PAK and D2PAK)
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
( TO-220FPAB)
IM(A)
100
90
80
70
60
50
40
30
20
IM
10
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
IM(A)
80
70
60
50
TC=25°C
40
TC=75°C
30
TC=125°C
20
IM
10
1E+0
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
TC=25°C
TC=75°C
TC=125°C
1E+0
3/10
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