STPS1L30MF 查看數據表（PDF） - STMicroelectronics
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STPS1L30MF Datasheet PDF : 7 Pages
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STPS1L30MF
Characteristics
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
PF(AV)(W)
0.50
0.45
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
0.40
δ=1
0.35
0.30
0.25
0.20
0.15
T
0.10
0.05
IF(AV)(A)
δ=tp/T
tp
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
IF(AV)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=270°C/W
Tamb(°C)
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance junction to case versus
pulse duration
IM(A)
22
20
18
16
14
12
10
8
6
4 IM
2
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
TC=25°C
TC=75°C
TC=125°C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1 Single pulse
0.0
1.E-04
1.E-03
tp(s)
T
1.E-02
δ=tp/T
tp
1.E-01
3/7
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