DSM2190F4 查看數據表（PDF） - STMicroelectronics
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DSM2190F4
STMicroelectronics
DSM2190F4 Datasheet PDF : 61 Pages
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DSM2190F4
Table 26. DC Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIH
High Level Input Voltage
3.0 V < VCC < 3.6 V
0.7VCC
VCC +0.5
V
VIL
Low Level Input Voltage
3.0 V < VCC < 3.6 V
–0.5
0.8
V
VIH1
Reset High Level Input Voltage (Note 1)
0.8VCC
VCC +0.5
V
VIL1
Reset Low Level Input Voltage (Note 1)
–0.5
0.2VCC –0.1 V
VHYS
Reset Pin Hysteresis
0.3
V
VLKO
VCC (min) for Flash Erase and
Program
1.5
2.2
V
VOL
Output Low Voltage
IOL = 20 µA, VCC = 3.0V
IOL = 4 mA, VCC = 3.0 V
0.01 0.1
V
0.15 0.45
V
VOH
Output High Voltage Except
VSTBY On
IOH = –20 µA, VCC = 3.0 V 2.9
IOH = –2 mA, VCC = 3.0 V 2.7
2.99
2.6
V
V
VOH1
Output High Voltage VSTBY On IOH1 = 1 µA
VSTBY – 0.8
V
IIDLE
Idle Current (VSTBY input)
VCC > VSTBY
–0.1
0.1
µA
VDF
SRAM Data Retention Voltage Only on VSTBY
2
V
ISB
Stand-by Supply Current
for Power-down Mode
CSI >VCC –0.3 V (Notes 2,3)
25 100
µA
ILI
Input Leakage Current
VSS < VIN < VCC
–1
±.1 1
µA
ILO
Output Leakage Current
0.45 < VIN < VCC
–10
±5 10
µA
ICC (DC)
(Note 5)
Operating
Supply
Current
PLD Only
PLD_TURBO = Off,
f = 0 MHz (Note 3)
PLD_TURBO = On,
f = 0 MHz
During Flash memory Write/
Flash memory Erase Only
Read Only, f = 0 MHz
0
200 400
10 25
0
0
µA/PT
µA/PT
mA
mA
PLD AC Adder
ICC (AC)
(Note 5) Flash memory AC Adder
(see note 4)
1.5 2.0
mA/
MHz
Note: 1. Reset (Reset) has hysteresis. VIL1 is valid at or below 0.2VCC –0.1. VIH1 is valid at or above 0.8VCC .
2. CSI deselected.
3. PLD is in non-Turbo mode, and none of the inputs are switching.
4. Please see Figure 25 for the PLD current calculation.
5. IOUT = 0 mA
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