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STF10N80K5 查看數據表(PDF) - STMicroelectronics

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STF10N80K5 Datasheet PDF : 17 Pages
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STF10N80K5,
STFU10N80K5
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power
MOSFETs in a TO-220FP and TO-220FP ultra narrow leads
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STF10N80K5
STFU10N80K5
VDS
800 V
RDS(on) max.
0.600 Ω
ID PTOT
9 A 30 W
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STF10N80K5
STFU10N80K5
Table 1: Device summary
Marking
Package
10N80K5
TO-220FP
TO-220FP ultra narrow leads
Packing
Tube
September 2016
DocID026564 Rev 5
This is information on a product in full production.
1/17
www.st.com

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