STF10N80K5 查看數據表（PDF） - STMicroelectronics

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STF10N80K5

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

STMicroelectronics 

STF10N80K5, STFU10N80K5

Electrical ratings

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

VGS

ID(1)

ID(1)

IDM(2)

PTOT

IAR

EAS

VISO

dv/dt (3)

dv/dt (4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current pulsed

Total dissipation at TC = 25 °C

Max. current during repetitive or single pulse avalanche (pulse

width limited by Tjmax.)

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS,

VDD = 50 V)

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tj

Operating junction temperature range

Tstg Storage temperature range

Value

Unit

± 30

V

9

A

6

A

36

A

30

W

3

A

130

mJ

2500

4.5

50

V

V/ns

- 55 to 150 °C

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD≤ 9 A, di/dt ≤ 100 A/μs; VDS peak ≤ V(BR)DSS

(4)VDS ≤ 640 V

Symbol

Rthj-case

Rthj-amb

Table 3: Thermal data

Parameter

Thermal resistance junction-case

Thermal resistance junction-ambient

Value

4.2

62.5

Unit

°C/W

°C/W

DocID026564 Rev 5

3/17

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