STU7N65M2(2014) 查看數據表（PDF） - STMicroelectronics

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STU7N65M2
(Rev.:2014)

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

STP7N65M2, STU7N65M2

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VGS

ID

ID

IDM(1)

PTOT

dv/dt (2)

dv/dt(3)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tstg

Storage temperature

Tj

Max. operating junction temperature

1. Pulse width limited by safe operating area

2. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V

3. VDS ≤ 520 V

Value

± 25

5

3.2

20

60

15

50

- 55 to 150

Unit

V

A

A

A

W

V/ns

°C

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Value

Unit

TO-220 IPAK

2.08

62.5

100

°C/W

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax )

1

A

EAS

Single pulse avalanche energy (starting Tj=25°C, ID= IAR;

VDD=50V)

103

mJ

DocID026788 Rev 2

3/18

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