STU7N65M2(2014) 查看數據表（PDF） - STMicroelectronics

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STU7N65M2
(Rev.:2014)

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STP7N65M2, STU7N65M2

Figure 14. Source-drain diode forward

characteristics

Figure 15. Normalized V(BR)DSS vs temperature

VSD (V)

1.1

GIPG060820141313FSR

TJ=-50°C

V(BR)DSS

(norm)

1.08

ID=1mA

AM18067v1

1

1.04

0.9

TJ=25°C

1.00

0.8

0.96

0.7

0.6

TJ=150°C

0.5

0

1

2

34

5 ISD(A)

0.92

0.88

-75

-25 0 25

75 125 TJ(°C)

8/18

DocID026788 Rev 2

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