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STM8S105S6B3C(2015) 查看數據表(PDF) - STMicroelectronics

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STM8S105S6B3C Datasheet PDF : 121 Pages
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Electrical characteristics
STM8S105x4/6
10.3.8
Reset pin characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified.
Table 41. NRST pin characteristics
Symbol
Parameter
Conditions Min
VIL(NRST)
NRST input low level voltage(1)
-
-0.3
VIH(NRST)
VOL(NRST)
RPU(NRST)
tIFP(NRST)
tINFP(NRST)
tOP(NRST)
NRST input high level voltage(1)
NRST output low level voltage(1)
NRST pull-up resistor(2)
NRST input filtered pulse(3)
NRST Input not filtered pulse(3)
NRST output pulse(3)
IOL= 2 mA
IOL= 3 mA
-
-
-
-
0.7 x VDD
-
30
-
500
20
1. Data based on characterization results, not tested in production.
2. The RPU pull-up equivalent resistor is based on a resistive transistor.
3. Data guaranteed by design, not tested in production.
Typ
Max Unit
- 0.3 x VDD
-
VDD+ 0.3 V
-
0.5
55
80
k
-
75
ns
-
-
-
-
µs
Figure 37. Typical NRST VIL and VIH vs VDD @ 4 temperatures
78/121
DocID14771 Rev 15

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