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STM8S105S6B3C(2015) 查看數據表(PDF) - STMicroelectronics

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STM8S105S6B3C Datasheet PDF : 121 Pages
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STM8S105x4/6
Electrical characteristics
Figure 38. Typical NRST pull-up resistance RPU vs VDD @ 4 temperatures
Figure 39. Typical NRST pull-up current Ipu vs VDD @ 4 temperatures
The reset network shown in Figure 40 protects the device against parasitic resets. The user
must ensure that the level on the NRST pin can go below VIL(NRST) max (see Table 41:
NRST pin characteristics), otherwise the reset is not taken into account internally.
For power consumption sensitive applications, the external reset capacitor value can be
reduced to limit the charge/discharge current. If NRST signal is used to reset external
circuitry, attention must be taken to the charge/discharge time of the external capacitor to
fulfill the external devices reset timing conditions. Minimum recommended capacity is
100 nF.
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