STM32L152RCY7 查看數據表（PDF） - STMicroelectronics

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STM32L152RCY7

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

STM32L151xC STM32L152xC

Electrical characteristics

6.3.7

Internal clock source characteristics

The parameters given in Table 31 are derived from tests performed under the conditions

summarized in Table 14.

High-speed internal (HSI) RC oscillator

Table 31. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min Typ Max Unit

fHSI

(1)(2)

TRIM

Frequency

HSI user-trimmed

resolution

Accuracy of the

ACCHSI(2) factory-calibrated

HSI oscillator

tSU(HSI)(2)

HSI oscillator

startup time

VDD = 3.0 V

-

Trimming code is not a multiple of 16 -

Trimming code is a multiple of 16

-

VDDA = 3.0 V, TA = 25 °C

-1(3)

VDDA = 3.0 V, TA = 0 to 55 °C

-1.5

VDDA = 3.0 V, TA = -10 to 70 °C

-2

VDDA = 3.0 V, TA = -10 to 85 °C

-2.5

VDDA = 3.0 V, TA = -10 to 105 °C

-4

VDDA = 1.65 V to 3.6 V

TA = -40 to 105 °C

-4

-

-

16

- MHz

± 0.4 0.7 %

- ± 1.5 %

-

1(3) %

- 1.5 %

-

2%

-

2%

-

2%

-

3%

3.7 6 µs

IDD(HSI)(2)

HSI oscillator

power consumption

-

- 100 140 µA

1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are

multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).

2. Guaranteed by characterization results.

3. Guaranteed by test in production.

Low-speed internal (LSI) RC oscillator

Table 32. LSI oscillator characteristics

Symbol

Parameter

Min

Typ

Max

fLSI(1)

LSI frequency

26

38

56

DLSI(2)

tsu(LSI)(3)

IDD(LSI)(3)

LSI oscillator frequency drift

0°C ≤TA ≤ 105°C

LSI oscillator startup time

LSI oscillator power consumption

-10

-

4

-

-

200

-

400

510

1. Guaranteed by test in production.

2. This is a deviation for an individual part, once the initial frequency has been measured.

3. Guaranteed by design.

Unit

kHz

%

µs

nA

DocID022799 Rev 13

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