STM32L152RCY7 查看數據表（PDF） - STMicroelectronics

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STM32L152RCY7

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

STM32L151xC STM32L152xC

Electrical characteristics

Flash memory and data EEPROM

Symbol

Table 36. Flash memory and data EEPROM characteristics

Parameter

Conditions

Min Typ Max(1) Unit

VDD

Operating voltage

Read / Write / Erase

-

Programming/ erasing Erasing

tprog

time for byte / word /

double word / half-page Programming

Average current during

the whole programming /

erase operation

IDD Maximum current (peak) TA = 25 °C, VDD = 3.6 V

during the whole

programming / erase

operation

1.65

-

3.6

V

-

3.28 3.94

ms

-

3.28 3.94

-

600 900 µA

-

1.5 2.5 mA

1. Guaranteed by design.

Table 37. Flash memory and data EEPROM endurance and retention

Symbol

Parameter

Conditions

Value

Min(1) Typ Max

Unit

NCYC(2)

Cycling (erase / write)

Program memory

Cycling (erase / write)

EEPROM data memory

TA = -40°C to

105 °C

tRET(2)

Data retention (program memory) after

10 kcycles at TA = 85 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 85 °C

Data retention (program memory) after

10 kcycles at TA = 105 °C

Data retention (EEPROM data memory)

after 300 kcycles at TA = 105 °C

TRET = +85 °C

TRET = +105 °C

1. Guaranteed by characterization results.

2. Characterization is done according to JEDEC JESD22-A117.

10 -

300 -

-

kcycles

-

30 - -

30 - -

years

10 - -

10 - -

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