STM32L152RCY7 查看數據表（PDF） - STMicroelectronics

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STM32L152RCY7

Ultra-low-power 32-bit MCU ARM®-based Cortex®-M3, 256KB Flash, 32KB SRAM, 8KB EEPROM, LCD, USB, ADC, DAC

STMicroelectronics 

STM32L151xC STM32L152xC

Electrical characteristics

6.3.13 I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 49 are derived from tests

performed under the conditions summarized in Table 14. All I/Os are CMOS and TTL

compliant.

Table 43. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

VIL Input low level voltage

VIH Input high level voltage

Vhys

I/O Schmitt trigger voltage

hysteresis(2)

TC and FT I/O

BOOT0

TC I/O

FT I/O

BOOT0

TC and FT I/O

BOOT0

-

-

0.45 VDD+0.38(2)

0.39 VDD+0.59(2)

0.15 VDD+0.56(2)

-

-

-

-

-

-

10% VDD(3)

0.3 VDD(1)(2)

0.14 VDD(2)

-

-

-

-

-

0.01

-

VSS ≤VIN ≤VDD

I/Os with LCD

-

-

±50

VSS ≤VIN ≤VDD

I/Os with analog

-

switches

-

±50

VSS ≤VIN ≤VDD

I/Os with analog

-

Ilkg

Input leakage current (4)

switches and LCD

VSS ≤VIN ≤VDD

I/Os with USB

-

-

±50

-

±250

VSS ≤VIN ≤VDD

TC and FT I/Os

-

-

±50

FT I/O

VDD ≤VIN ≤5V

-

RPU

Weak pull-up equivalent

resistor(5)(1)

VIN = VSS

25

-

±10

45

65

RPD

Weak pull-down equivalent

resistor(5)

VIN = VDD

25

45

65

CIO I/O pin capacitance

-

-

5

-

1. Guaranteed by test in production.

2. Guaranteed by design.

3. With a minimum of 200 mV.

4. The max. value may be exceeded if negative current is injected on adjacent pins.

5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

MOS/NMOS contribution to the series resistance is minimum (~10% order).

Unit

V

nA

µA

kΩ

kΩ

pF

DocID022799 Rev 13

85/136

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