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STM32F100RCT6BTR 查看數據表(PDF) - STMicroelectronics

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STM32F100RCT6BTR Datasheet PDF : 98 Pages
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Electrical characteristics
STM32F100xC, STM32F100xD, STM32F100xE
Table 20. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
DuCy(HSE) Duty cycle(1)
45
IL
OSC_IN Input leakage current
VSS VIN VDD
1. Guaranteed by design, not tested in production.
55
%
±1 µA
Low-speed external user clock generated from an external source
The characteristics given in Table 21 result from tests performed using an low-speed
external clock source, and under the ambient temperature and supply voltage conditions
summarized in Table 9.
Table 21. Low-speed external user clock characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
fLSE_ext
User external clock source
frequency(1)
32.768 1000 kHz
VLSEH
VLSEL
OSC32_IN input pin high level
voltage(1)
OSC32_IN input pin low level
voltage(1)
0.7VDD
VSS
VDD
V
0.3VDD
tw(LSE)
tw(LSE)
OSC32_IN high or low time(1)
450
tr(LSE)
tf(LSE)
OSC32_IN rise or fall time(1)
Cin(LSE) OSC32_IN input capacitance(1)
DuCy(LSE) Duty cycle(1)
5
30
IL
OSC32_IN Input leakage current VSS VIN VDD
1. Guaranteed by design, not tested in production.
ns
50
pF
70
%
±1
µA
48/98
Doc ID 15081 Rev 7

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