STM32F301R8T7 查看數據表（PDF） - STMicroelectronics

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STM32F301R8T7

ARM® Cortex®-M4 32-bit MCU+FPU, up to 64 KB Flash, 16 KB SRAM, ADC, DAC, COMP, Op-Amp, 2.0 – 3.6 V

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Electrical characteristics

STM32F301x6 STM32F301x8

6.3.4

Embedded reference voltage

The parameters given in Table 27 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 23.

Symbol

Table 27. Embedded internal reference voltage

Parameter

Conditions

Min Typ Max Unit

VREFINT

TS_vrefint

VRERINT

TCoeff

Internal reference voltage

ADC sampling time when

reading the internal

reference voltage

Internal reference voltage

spread over the

temperature range

Temperature coefficient

–40 °C < TA < +105 °C

-

VDD = 3 V ±10 mV

-

1.20 1.23 1.25 V

2.2 -

-

µs

-

- 10(1) mV

-

-

100 ppm/°

(1)

C

1. Guaranteed by design.

Table 28. Internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at

temperature of 30 °C

VDDA= 3.3 V

0x1FFF F7BA - 0x1FFF F7BB

6.3.5

Note:

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 12: Current consumption

measurement scheme.

All Run-mode current consumption measurements given in this section are performed with a

reduced code that gives a consumption equivalent to CoreMark code.

The total current consumption is the sum of IDD and IDDA.

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