MB84VD22182EG 查看數據表（PDF） - Fujitsu

零件编号

产品描述 (功能)

生产厂家

MB84VD22182EG

32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM

Fujitsu 

MB84VD2218XEG/EH/2219XEG/EH-90

• Erase/Program Operations (Flash)

Parameter Symbols

JEDEC Standard

Description

tAVAV

tWC

Write Cycle Time

tAVWL

tAS

Address Setup Time (WE to Addr.)

—

tASO

Address Setup Time to CE Low During Toggle Bit Polling

tWLAX

tAH

Address Hold Time (WE to Addr.)

—

tAHT

Address Hold Time from CE or OE High During Toggle Bit

Polling

tDVWH

tDS

Data Setup Time

tWHDX

tDH

Data Hold Time

—

tOES

Output Enable Setup Time

Read

—

tOEH

Output Enable Hold Time

Toggle and Data Polling

—

tCEPH CE High During Toggle Bit Polling

—

tOEPH OE High During Toggle Bit Polling

tGHEL

tGHEL Read Recover Time Before Write (OE to CEf)

tGHWL

tGHWL Read Recover Time Before Write (OE to WE)

tWLEL

tWS

WE Setup Time (CEf to WE)

tELWL

tCS

CEf Setup Time (WE to CEf)

tEHWH

tWH

WE Hold Time (CEf to WE)

tWHEH

tCH

CEf Hold Time (WE to CEf)

tWLWH

tWP

Write Pulse Width

tELEH

tCP

CEf Pulse Width

tWHWL

tWPH

Write Pulse Width High

tEHEL

tCPH

CEf Pulse Width High

tWHWH1

tWHWH1

Byte Programming Operation

Word Programming Operation

tWHWH2

tWHWH2 Sector Erase Operation (Note 1)

Min.

90

0

15

45

-90

Typ.

—

—

—

—

Max.

—

—

—

—

Unit

ns

ns

ns

ns

0

—

— ns

35

—

— ns

0

—

— ns

0

—

— ns

0

—

— ns

10

—

— ns

20

—

— ns

20

—

— ns

0

—

— ns

0

—

— ns

0

—

— ns

0

—

— ns

0

—

— ns

0

—

— ns

35

—

— ns

35

—

— ns

30

—

— ns

30

—

— ns

—

8

— µs

—

16

— µs

—

1

—

s

(Continued)

40

Share Link: