2SC3181 查看數據表（PDF） - New Jersey Semiconductor
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2SC3181 Datasheet PDF : 2 Pages
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^mni-donductoi Lpiodu.cti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC3181
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(satr 2.0V(Max.) @|c= 6A
• Good Linearity of hFE
• Complement to Type 2SA1264
APPLICATIONS
• Power amplifier applications
• Recommend for 55W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
I c-iO L.
Tj
Junction Temperature
0.8
A
80
W
150
"C
Tstg
Storage Temperature Range
-55-150
"C
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1A 2* 2*
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TC-3PI package
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B - S-* *-
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mm
DIM MIN MAX
A 19.90 20.10
B 15.50 15.70
\'_ 4.40 i 4.60
D 0.90 1.10
F 3.20 3.40
H 2.SO 3.10
J 0,50 0.70
K 19.90 20.10
L 1.90 2.10
N 10.80 11.00
U 4.40 4.60
R 3,30 3.35
S 1.40 1,60
T 1.00 1.20
U 2.10 2.30
Z 8.90 9.10
NJ Scmi-C'ontluctors reserves the right to change test eonilitions. parameter limits nncl paekage dimensions \\ithout
nniiee. Inrbrmntion furnisheil by N.I Seini-t'oniluetors is believed to he hofh iieciirnfe and reliable :it the time ofgoing
in press. I li)\\L'\er. N,l Seini-Condiietors assumes no responsibility lor ;m> errors or omissions discovered in ii> u>e.
N.I Scmi-Coiulntlors enauim.!^ customers to \orily thai datasheets are eiinx-nt before placing orders.
Quality Semi-Conductors
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