2SC3181 查看數據表（PDF） - New Jersey Semiconductor
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2SC3181 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC3181
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 50mA; !B= 0
120
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 6A; IB= 0.6A
VBE(on)
Base-Emitter On Voltage
lc= 4A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE=0
2.0
V
1.5
V
5
nA
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
5
tiA
hpE-1
DC Current Gain
lc=1A;VCE=5V
55
160
hFE-2
DC Current Gain
lc= 4A; VCE= 5V
35
COB
Output Capacitance
lE=0;VcB=10V;f,est= 1.0MHz
fT
Current-Gain—Bandwidth Product
lc= 1A;VCE=5V
190
PF
30
MHz
• hpE-1 Classifications
R
0
55-110
80-160
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