STPS3045CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS3045CFP Datasheet PDF : 12 Pages
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Characteristics
1
Characteristics
STPS3045C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
IFSM
PARM
Tstg
Tj
Tj
Repetitive peak reverse voltage
Forward rms voltage
Average forward current
= 0.5
TO-220AB / D2PAK /
I2PAK / TO-247
TO-220FPAB
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature(1)
Tc = 155 °C Per diode
Per device
Tc = 130 °C
tp = 10 ms sinusoidal
tp = 1 µs, Tj = 25 °C
Maximum operating junction temperature
(DC forward current without reverse bias, t = 1 hour for D2PAK)(1)
dV/dt Critical rate of rise reverse voltage
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Value
45
30
15
30
220
6000
-65 to +175
+175
200
10000
Unit
V
A
A
A
W
°C
°C
°C
V/µs
Symbol
Rth (j-c) Junction to case
Rth (c) Coupling
Table 3. Thermal resistance parameters
Parameter
TO-220AB / D2PAK / I2PAK
TO-247
TO-220FPAB
TO-220AB / D2PAK / I2PAK / TO-247
TO-220FPAB
Per diode
Total
Per diode
Total
Per diode
Total
Value
1.60
0.95
1.5
0.9
4
3.2
0.30
2.5
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
2/12
Doc ID 3510 Rev 8
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