STPS3045CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS3045CFP Datasheet PDF : 12 Pages
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STPS3045C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
1. Pulse test: tp = 380 µs, < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 30 A
200
µA
11
40
mA
0.5
0.57
0.84
V
0.65 0.72
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.01 IF2(RMS)
Figure 1. Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
12
11
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
10
9
8
7
6
5
4
3
2
1
IF(AV)(A)
0
0
2
4
6
8
10
12
14
δ=1
T
δ=tp/T
tp
16
18
20
Figure 2. Average forward current versus
ambient temperature ( = 0.5, per diode)
IF(AV)(A)
18
16
Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK, D2PAK, SOT-93, TO-247)
14
Rth(j-a)=Rth(j-c) (TO-220FPAB)
12
10
8
Rth(j-a)=15°C/W
6
T
4
2
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating
versus pulse duration
versus junction temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Doc ID 3510 Rev 8
3/12
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