STPS3045CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS3045CFP Datasheet PDF : 12 Pages
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Characteristics
STPS3045C
Figure 5. Non repetitive surge peak forward Figure 6. Non repetitive surge peak forward
current versus overload duration (max. values, current versus overload duration (max. values,
per diode)
per diode, TO-220FPAB)
IM(A)
200
180
160
140
120
100
80
60
IM
40
20
t
δ=0.5
0
1.E-03
TO-220AB, I2PAK, D2PAK, TO-247
1.E-02
t(s)
1.E-01
TC=75°C
TC=100°C
TC=125°C
1.E+00
IM(A)
120
100
80
60
40
IM
20
0
1.E-03
t
δ=0.5
1.E-02
t(s)
TO-220FPAB
TC=75°C
TC=100°C
TC=125°C
1.E-01
1.E+00
Figure 7. Relative variation of thermal
impedance junction to ambient versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9 TO-220AB, I2PAK, D2PAK, TO-247
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
δ=tp/T
1.E-01
tp
1.E+00
Figure 8. Relative variation of thermal
impedance junction to ambient versus pulse
duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.9
TO-220FPAB
0.8
0.7
0.6 δ = 0.5
0.5
0.4
0.3 δ = 0.2
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
tp(s)
1.E-01
T
δ=tp/T
1.E+00
tp
1.E+01
Figure 9. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
IR(µA)
1.E+05
1.E+04
1.E+03
1.E+02
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1.E+01
Tj=25°C
1.E+00
1.E-01
0
VR(V)
5
10
15
20
25
30
35
40
45
Figure 10. Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(nF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
VR(V)
100
1
10
100
4/12
Doc ID 3510 Rev 8
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