FDFM2P110(2005-04) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDFM2P110
(Rev.:2005-04)
(Rev.:2005-04)
Fairchild Semiconductor
FDFM2P110 Datasheet PDF : 7 Pages
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefï¬cient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefï¬cient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –3.5 A
VGS = –4.5 V, ID = –3.0 A
VGS = –4.5 V, ID = –3.5A, TJ = 125°C
VGS = –2.5 V, VDS = –5 V
VDS = –5 V, ID = –3.5 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics (Note 2)
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, f = 1.0 MHz
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
VDS = –10 V, ID = –3.5 A,
VGS = –4.5 V
Qgd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2 A
trr
Diode Reverse Recovery Time
IF = –3.5 A,
Qrr
Diode Reverse Recovery Charge
dIF/dt = 100 A/µs
Schottky Diode Characteristic
(Note 2)
VR
Reverse Voltage
IR
Reverse Leakage
VF
Forward Voltage
IR = 1 mA
VR = 5 V
IF = 1 A
TJ = 25°C
TJ = 100°C
TJ = 25°C
Min
–20
–0.6
–10
20
Typ Max Units
V
–11
mV/°C
–1
µA
±100
nA
–1.0 –1.5
3
V
mV/°C
101 140
mΩ
145 200
136 202
A
6
S
280
pF
65
pF
35
pF
7
Ω
8
16
ns
12
22
ns
11
20
ns
3.2 6.4
ns
3
4
nC
0.7
nC
1
nC
–2
A
–0.9 –1.2
V
13
nS
3
nC
V
100
µA
10
mA
0.32 0.39
V
2
FDFM2P110 Rev. C2
www.fairchildsemi.com
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