FDFM2P110(2005-04) View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FDFM2P110
(Rev.:2005-04)

Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

Fairchild Semiconductor 

Typical Characteristics

10

VGS = -4.5V

8

-3.5V

-3.0V

6

-2.5V

4

2

-2.0V

0

0

1

2

3

4

5

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

2.4

2.2

2

VGS = -2.5V

1.8

1.6

-3.0V

1.4

1.2

-3.5V

-4.0V

1

0.8

0

2

4

6

-ID, DRAIN CURRENT (A)

-4.5V

8

10

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID = -3.5A

VGS = -4.5V

1.4

1.2

1

0.8

0.6

-50

-25

0

25

50

75

100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 3. On-Resistance Variation with

Temperature.

8

VDS = -5V

6

4

TA = -55°C

25°C

125°C

2

0

0.5

1

1.5

2

2.5

3

3.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.44

0.4

ID = -1.8A

0.36

0.32

0.28

0.24

TA = 125° C

0.2

0.16

0.12

TA = 25° C

0.08

1

2

3

4

5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

10

1

0.1

0.01

VGS = 0V

TA = 125°C

25°C

-55°C

0.001

0.0001

0.2

0.4

0.6

0.8

1

1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

4

FDFM2P110 Rev. C2

www.fairchildsemi.com

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