FDFM2P110(2005-04) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDFM2P110
(Rev.:2005-04)
(Rev.:2005-04)
Fairchild Semiconductor
FDFM2P110 Datasheet PDF : 7 Pages
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Typical Characteristics
5
ID = -3.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
1
2
3
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
TJ = 125° C
1
0.1
TJ = 25° C
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
500
400
Ciss
300
f = 1MHz
VGS = 0 V
200
Coss
100
Crss
0
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
0.1
0.01
TJ = 125° C
0.001
0.0001
TJ = 100° C
0.00001
TJ = 25° C
0.000001
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R JA(t) = r(t) * R JA
R JA =145 °C/W
P(pk)
t1
t2
TJ - TA = P * R JA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5
FDFM2P110 Rev. C2
www.fairchildsemi.com
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