M45PE40-VMP6TP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M45PE40-VMP6TP

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

STMicroelectronics 

M45PE40

Table 6. Power-Up Timing and VWI Threshold

Symbol

Parameter

tVSL1 VCC(min) to S low

tPUW1 Time delay before the first Write, Program or Erase instruction

VWI1 Write Inhibit Voltage

Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.

Min.

30

1

1.5

Max. Unit

µs

10

ms

2.5

V

INITIAL DELIVERY STATE

The device is delivered with the memory array

erased: all bits are set to 1 (each byte contains

FFh). All usable Status Register bits are 0.

MAXIMUM RATING

Stressing the device outside the ratings listed in

Table 7. may cause permanent damage to the de-

vice. These are stress ratings only, and operation

of the device at these, or any other conditions out-

side those indicated in the Operating sections of

this specification, is not implied. Exposure to Ab-

solute Maximum Rating conditions for extended

periods may affect device reliability. Refer also to

the STMicroelectronics SURE Program and other

relevant quality documents.

Table 7. Absolute Maximum Ratings

Symbol

Parameter

Min.

Max.

Unit

TSTG

Storage Temperature

–65

150

°C

TLEAD

Lead Temperature during Soldering

See note 1

°C

VIO

Input and Output Voltage (with respect to Ground)

–0.6

4.0

V

VCC

Supply Voltage

–0.6

4.0

V

VESD

Electrostatic Discharge Voltage (Human Body model) 2

–2000

2000

V

Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and

the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU

2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω)

24/35

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