MC908QL4ME View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MC908QL4ME

M68HC08 Microcontrollers

Freescale Semiconductor 

Memory

2.6.2 FLASH Page Erase Operation

Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes

starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also

forms a page. Any FLASH memory page can be erased alone.

1. Set the ERASE bit and clear the MASS bit in the FLASH control register.

2. Read the FLASH block protect register.

3. Write any data to any FLASH location within the address range of the block to be erased.

4. Wait for a time, tNVS.

5. Set the HVEN bit.

6. Wait for a time, tErase.

7. Clear the ERASE bit.

8. Wait for a time, tNVH.

9. Clear the HVEN bit.

10. After time, tRCV, the memory can be accessed in read mode again.

NOTE

The COP register at location $FFFF should not be written between steps

5-9, when the HVEN bit is set. Since this register is located at a valid

FLASH address, unpredictable behavior may occur if this location is written

while HVEN is set.

NOTE

Programming and erasing of FLASH locations cannot be performed by

code being executed from the FLASH memory. While these operations

must be performed in the order as shown, other unrelated operations may

occur between the steps.

CAUTION

A page erase of the vector page will erase the internal oscillator trim value at $FFC0.

MC68HC908QL4 Data Sheet, Rev. 7

36

Freescale Semiconductor

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