MC908QL4ME View Datasheet(PDF) - Freescale Semiconductor

Part Name

Description

Manufacturer

MC908QL4ME

M68HC08 Microcontrollers

Freescale Semiconductor 

FLASH Memory (FLASH)

2.6.3 FLASH Mass Erase Operation

Use the following procedure to erase the entire FLASH memory to read as a 1:

1. Set both the ERASE bit and the MASS bit in the FLASH control register.

2. Read the FLASH block protect register.

3. Write any data to any FLASH address(1) within the FLASH memory address range.

4. Wait for a time, tNVS.

5. Set the HVEN bit.

6. Wait for a time, tMErase.

7. Clear the ERASE and MASS bits.

NOTE

Mass erase is disabled whenever any block is protected (FLBPR does not

equal $FF).

8. Wait for a time, tNVHL.

9. Clear the HVEN bit.

10. After time, tRCV, the memory can be accessed in read mode again.

NOTE

Programming and erasing of FLASH locations cannot be performed by

code being executed from the FLASH memory. While these operations

must be performed in the order as shown, other unrelated operations may

occur between the steps.

CAUTION

A mass erase will erase the internal oscillator trim value at $FFC0.

1. When in monitor mode, with security sequence failed (see 16.3.2 Security), write to the FLASH block protect register

instead of any FLASH address.

MC68HC908QL4 Data Sheet, Rev. 7

Freescale Semiconductor

37

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