Memories and memory interfaces
Table 17. NVM program/erase timing specifications
Symbol Description
thvpgm4 Longword Program high-voltage time
thversscr Sector Erase high-voltage time
thversblk32k Erase Block high-voltage time for 32 KB
thversblk128k Erase Block high-voltage time for 128 KB
Min.
Typ.
Max.
Unit
—
7.5
18
μs
—
13
113
ms
—
52
452
ms
—
208
1808
ms
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 18. Flash command timing specifications
Symbol Description
Read 1s Block execution time
trd1blk32k
trd1blk128k
• 32 KB data flash
• 128 KB program flash
Min.
Typ.
Max.
Unit
—
—
0.5
ms
—
—
1.7
ms
trd1sec1k Read 1s Section execution time (data flash
sector)
tpgmchk Program Check execution time
trdrsrc Read Resource execution time
tpgm4 Program Longword execution time
Erase Flash Block execution time
tersblk32k
tersblk128k
• 32 KB data flash
• 128 KB program flash
—
—
60
μs
—
—
45
μs
—
—
30
μs
—
65
145
μs
—
55
465
ms
—
220
1850
ms
tersscr Erase Flash Sector execution time
Program Section execution time
tpgmsec512
tpgmsec1k
• 512 B flash
• 1 KB flash
—
14
114
ms
—
4.7
—
ms
—
9.3
—
ms
trd1all Read 1s All Blocks execution time
—
trdonce Read Once execution time
—
tpgmonce Program Once execution time
—
tersall Erase All Blocks execution time
—
tvfykey Verify Backdoor Access Key execution time
—
Program Partition for EEPROM execution time
tpgmpart32k
• 32 KB FlexNVM
—
—
1.8
ms
—
25
μs
65
—
μs
275
2350
ms
—
30
μs
70
—
ms
Table continues on the next page...
Notes
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1
1
Notes
1
1
1
2
2
1
2
1
MCF51QM128 Data Sheet, Rev. 6, 01/2012.
28
Freescale Semiconductor, Inc.