DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

PIC16LC62B-04E/SO View Datasheet(PDF) - Microchip Technology

Part Name
Description
Manufacturer
PIC16LC62B-04E/SO
Microchip
Microchip Technology 
PIC16LC62B-04E/SO Datasheet PDF : 120 Pages
First Prev 81 82 83 84 85 86 87 88 89 90 Next Last
PIC16C62B/72A
13.1 DC Characteristics: PIC16C62B/72A-04 (Commercial, Industrial, Extended)
PIC16C62B/72A-20 (Commercial, Industrial, Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature 0°C TA +70°C for commercial
-40°C TA +85°C for industrial
-40°C TA +125°C for extended
Param Sym
No.
Characteristic
Min Typ† Max Units
Conditions
D001 VDD Supply Voltage
D001A
4.0 - 5.5 V XT, RC and LP osc mode
4.5 - 5.5 V HS osc mode
VBOR* - 5.5 V BOR enabled (Note 7)
D002* VDR RAM Data Retention
Voltage (Note 1)
-
1.5 -
V
D003 VPOR VDD Start Voltage to
-
VSS
-
ensure internal
Power-on Reset signal
V See section on Power-on Reset for details
D004* SVDD VDD Rise Rate to
0.05 -
D004A*
ensure internal
TBD -
Power-on Reset signal
- V/ms PWRT enabled (PWRTE bit clear)
-
PWRT disabled (PWRTE bit set)
See section on Power-on Reset for details
D005
VBOR Brown-out Reset
voltage trip point
3.65 - 4.35 V BODEN bit set
D010 IDD Supply Current
(Note 2, 5)
- 2.7 5 mA XT, RC osc modes
FOSC = 4 MHz, VDD = 5.5V (Note 4)
D013
-
10 20 mA HS osc mode
FOSC = 20 MHz, VDD = 5.5V
D020 IPD Power-down Current - 10.5 42 µA VDD = 4.0V, WDT enabled,-40°C to +85°C
(Note 3, 5)
-
1.5 16 µA VDD = 4.0V, WDT disabled, 0°C to +70°C
D021
-
1.5 19 µA VDD = 4.0V, WDT disabled,-40°C to +85°C
D021B
-
2.5 19 µA VDD = 4.0V, WDT disabled,-40°C to +125°C
D022*
D022A*
IWDT
IBOR
Module Differential
Current (Note 6)
Watchdog Timer
Brown-out Reset
-
6.0 20 µA WDTE BIT SET, VDD = 4.0V
- TBD 200 µA BODEN bit set, VDD = 5.0V
* These parameters are characterized but not tested.
† Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which VDD can be lowered without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to VDD,
MCLR = VDD; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD and VSS.
4: For RC osc mode, current through Rext is not included. The current through the resistor can be estimated by
the formula Ir = VDD/2Rext (mA) with Rext in kOhm.
5: Timer1 oscillator (when enabled) adds approximately 20 µA to the specification. This value is from charac-
terization and is for design guidance only. This is not tested.
6: The current is the additional current consumed when this peripheral is enabled. This current should be
added to the base IDD or IPD measurement.
7: This is the voltage where the device enters the Brown-out Reset. When BOR is enabled, the device will
perform a brown-out reset when VDD falls below VBOR.
DS35008B-page 84
Preliminary
© 1998 Microchip Technology Inc.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]