ST92P141K4D0 View Datasheet(PDF) - STMicroelectronics
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Description
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ST92P141K4D0 Datasheet PDF : 179 Pages
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ST92141 - GENERAL DESCRIPTION
1.3 MEMORY MAP
1.3.1 Memory Configuration
The Program memory space of the ST92141, 16K
bytes of directly addressable on-chip memory, is
fully available to the user.
The first 256 memory locations from address 0 to
FFh hold the Reset Vector, the Top-Level (Pseudo
Non-Maskable) interrupt, the Divide by Zero Trap
Routine vector and, optionally, the interrupt vector
table for use with the on-chip peripherals and the
external interrupt sources. Apart from this case no
other part of the Program memory has a predeter-
mined function except segment 21h which is re-
served for use by STMicroelectronics.
1.3.2 EPROM Programming
The 16K bytes of EPROM memory of the
ST92E141 may be programmed by using the
EPROM Programming Boards (EPB) or gang pro-
grammers available from STMicroelectronics.
EPROM Erasing
The EPROM of the windowed package of the
ST92E141 may be erased by exposure to Ultra-Vi-
olet light.
The erasure characteristic of the ST92E141 is
such that erasure begins when the memory is ex-
posed to light with a wave lengths shorter than ap-
proximately 4000Å. It should be noted that sunlight
Figure 2. Memory Map
and some types of fluorescent lamps have wave-
lengths in the range 3000-4000Å. It is thus recom-
mended that the window of the ST92E141 packag-
es be covered by an opaque label to prevent unin-
tentional erasure problems when testing the appli-
cation in such an environment.
The recommended erasure procedure of the
EPROM is the exposure to short wave ultraviolet
light which have a wave-length 2537Å. The inte-
grated dose (i.e. U.V. intensity x exposure time) for
erasure should be a minimum of 15W-sec/cm2.
The erasure time with this dosage is approximate-
ly 30 minutes using an ultraviolet lamp with
12000mW/cm2 power rating. The ST92E141
should be placed within 2.5cm (1 inch) of the lamp
tubes during erasure.
Table 5. First 6 Bytes of Program Space
0 Address high of Power on Reset routine
1 Address low of Power on Reset routine
2 Address high of Divide by zero trap Subroutine
3 Address low of Divide by zero trap Subroutine
4 Address high of Top Level Interrupt routine
5 Address low of Top Level Interrupt routine
220000h
21FFFFh
SEGMENT 21h
64 Kbytes
Reserved
Internal
RAM
512 bytes
SEGMENT 20h
200200h 64 Kbytes
200000h
FASTROM/EPROM
004000h
003FFFh
SEGMENT 0
64 Kbytes
16 Kbytes
000000h
Reserved
Reserved
Reserved
Internal ROM
max. 64 Kbytes
210000h
20FFFFh
20C000h
20BFFFh
208000h
207FFFh
204000h
203FFFh
200000h
00FFFFh
00C000h
00BFFFh
008000h
007FFFh
004000h
003FFFh
000000h
PAGE 83 - 16 Kbytes
PAGE 82 - 16 Kbytes
PAGE 81 - 16 Kbytes
PAGE 80 - 16 Kbytes
PAGE 3 - 16 Kbytes
PAGE 2 - 16 Kbytes
PAGE 1 - 16 Kbytes
PAGE 0 - 16 Kbytes
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