Si3232
Table 8. DC Characteristics, VDDA = VDDD = VCC = 3.3 V
(VDD, VDD1–VDD4 = 3.13 V to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
High Level Input
VIH
Voltage
0.7 x VDD
—
3.47
V
Low Level Input Voltage VIL
High Level Output
VOH
Voltage
IO = 4 mA
—
—
0.3 x VDD
V
VDD – 0.6
—
—
V
Low Level Output
Voltage
VOL
SDO, INT, SDITHRU
IO = –4 mA
—
—
0.4
V
BATSELa/b, GPOa/b:
IO = –40 mA
—
—
0.72
V
SDITHRU Internal
Pullup Resistance
35
50
—
kΩ
GPO Relay Driver
Source Impedance
ROUT
VDD1–VDD4 = 3.13 V,
IO < 28 mA
—
63
—
Ω
GPO Relay Driver Sink
RIN
Impedance
VDD1–VDD4 = 3.13 V,
IO < 85 mA
—
11
—
Ω
Input Leakage Current
IL
—
—
±10
µA
Note: All timing (except Rise and Fall time) is referenced to the 50% level of the waveform. Input test levels are VIH = VDD –
0.4 V, VIL = 0.4 V. Rise and Fall times are referenced to the 20% and 80% levels of the waveform.
Table 9. Switching Characteristics—General Inputs
(VDD, VDD1–VDD4 = 3.13 to 3.47 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade, CL = 20 pF)
Parameter
Symbol
Min
Typ
Max
Unit
Rise Time, RESET
RESET Pulse Width*
tr
—
—
5
ns
trl
500
—
—
ns
RESET Pulse Width*, SDI Daisy Chain Mode
trl
6
—
—
µs
*Note: The minimum RESET pulse width assumes the SDITHRU pin is tied to ground via a pulldown resistor no greater than
10 kΩ per device.
12
Preliminary Rev. 0.96