Si3232
1. Electrical Specifications
Table 1. Absolute Maximum Ratings and Thermal Information1
Parameter
Symbol
Test Condition
Value
Unit
Supply Voltage, Si3200 and Si3232
High Battery Supply Voltage2
VDD, VDD1–VDD4
VBATH
Low Battery Supply Voltage, Si32002
TIP or RING Voltage, Si3200
VBAT, VBATL
VTIP, VRING
TIP, RING Current, Si3200
STIPAC, STIPDC, SRINGAC,
SRINGDC Current, Si3232
ITIP, IRING
Continuous
10 ms
Continuous
Continuous
Pulse < 10 µs
Pulse < 4 µs
–0.5 to 6.0
V
0.4 to –104
V
0.4 to –109
VBATH
V
–104
V
VBATH –15
V
VBATH –35
V
±100
mA
±20
mA
Input Current, Digital Input Pins
Digital Input Voltage
Operating Temperature Range
Storage Temperature Range
Si3232 Thermal Resistance, Typical3
(TQFP-64 ePad)
Si3200 Thermal Resistance, Typical3
(SOIC-16 ePad)
IIN
VIND
TA
TSTG
θJA
θJA
Continuous
±10
–0.3 to (VDD + 0.3)
–40 to 100
–40 to 150
25
mA
V
°C
°C
°C/W
55
°C/W
Continuous Power Dissipation,
Si32004
PD
TA = 85 °C, SOIC-16
1
W
Continuous Power Dissipation,
Si3232
PD
TA = 85 °C, TQFP-64
1.6
W
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. The dv/dt of the voltage applied to the VBAT, VBATH, and VBATL pins must be limited to 10 V/µs.
3. The thermal resistance of an exposed pad package is assured when the recommended PCB layout guidelines are
followed correctly. The specified performance requires that the exposed pad be soldered to an exposed copper surface
of equal size and that multiple vias are added to enable heat transfer between the top-side copper surface and a large
internal copper ground plane. Refer to “AN55: Dual ProSLIC™ User Guide” or to the Si3232 evaluation board data
sheet for specific layout examples.
4. On-chip thermal limiting circuitry will shut down the circuit at a junction temperature of approximately 150 °C. For
optimal reliability, operation above 140 °C junction temperature should be avoided.
4
Preliminary Rev. 0.96