SI3232 View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

SI3232

DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING

Silicon Laboratories 

Si3232

Table 3. Power Supply Characteristics1

(VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)

Parameter

Symbol

Test Condition

Min Typ Max Unit

VDD1–VDD4

Supply Current

(Si3232)

IVDD1–IVDD4 Sleep mode, RESET = 0

Open (high impedance)

Active on-hook standby

—

1

—

mA

—

15

—

mA

—

15

—

mA

Forward/reverse active off-hook

ABIAS = 4 mA

—

20

—

mA

VDD Supply

Current (Si3200)

IVDD

Forward/reverse active OHT

OBIAS = 4 mA

—

12 +

—

mA

ILIM

Ringing, VRING = 45 Vrms,

—

28

—

mA

VBAT = –70 V, Sine Wave, 1 REN load2

Sleep mode, RESET = 0

—

100

—

µA

Open (high impedance)

—

100

—

µA

Active on-hook standby

—

110

—

µA

Forward/reverse active off-hook,

ABIAS = 4 mA, VBAT = –24 V

—

110

—

µA

Forward/reverse OHT, OBIAS = 4 mA,

VBAT = –70 V

—

110

—

µA

Ringing, VRING = 45 Vrms,

—

110

—

µA

VBAT = –70 V, Sine Wave, 7 REN load

VBAT Supply

Current (Si3200)

IVBAT

Sleep mode, RESET = 0, VBAT = –70 V —

100

—

µA

Open (high impedance), VBAT = –70 V —

225

—

µA

Active on-hook standby, VBAT = –70 V

—

400

—

µA

Forward/reverse active off-hook,

ABIAS = 4 mA, VBAT = –24 V

4.4 +

—

ILIM

—

mA

Forward/reverse OHT, OBIAS = 4 mA,

VBAT = –70 V

—

8.4

—

mA

Ringing, VRING = 45 Vrms,

—

6

—

mA

VBAT = –70 V, Sine wave, 1 REN load2

Notes:

1. All specifications are for a single channel based on measurements with both channels in the same operating state.

2. See “4.7.4. Ringing Power Considerations” for current and power consumption under other operating conditions.

3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must

include an additional VBAT x ILIM term.

6

Preliminary Rev. 0.96

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