SI3232 View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

Manufacturer

SI3232

DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING

Silicon Laboratories 

Si3232

Table 3. Power Supply Characteristics1 (Continued)

(VDD, VDD1–VDD4 = 3.3 V, TA = 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)

Parameter

Symbol

Test Condition

Min Typ Max Unit

Power Consumption

PSLEEP Sleep mode, RESET = 0, VBAT = –70 V —

8

— mW

POPEN

Open (high impedance), VBAT = –70 V

—

65

— mW

PSTBY

Active on-hook standby, VBAT = –48 V

—

70

— mW

PSTBY

Active on-hook standby, VBAT = –70 V

—

80

— mW

PACTIVE3

Forward/reverse active off-hook,

ABIAS = 4 mA, VBAT = –24 V

—

175

— mW

PACTIVE3

Forward/reverse active off-hook,

ABIAS = 4 mA, VBAT = –48 V

—

280

— mW

POHT

Forward/reverse OHT, OBIAS = 4 mA,

VBAT = –48 V

—

500

— mW

POHT

Forward/reverse OHT, OBIAS = 4 mA,

VBAT = –70 V

—

685

— mW

PRING

Ringing, VRING = 45 Vrms,

—

516

— mW

VBAT = –70 V, Sine Wave, 1 REN load2

Notes:

1. All specifications are for a single channel based on measurements with both channels in the same operating state.

2. See “4.7.4. Ringing Power Considerations” for current and power consumption under other operating conditions.

3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must

include an additional VBAT x ILIM term.

Preliminary Rev. 0.96

7

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