DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST10F280 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ST10F280 Datasheet PDF : 186 Pages
First Prev 21 22 23 24 25 26 27 28 29 30 Next Last
ST10F280
5 - INTERNAL FLASH MEMORY
5.1 - Overview
– 512K Byte on-chip Flash memory
– Two possibilities of Flash mapping into the CPU
address space
– Flash memory can be used for code and data
storage
– 32-bit, zero waitstate read access (50ns cycle
time at fCPU = 40MHz)
– Erase-Program Controller (EPC) similar to
M29F400B STM’s stand-alone Flash memory
• Word-by-Word Programmable (16µs typical)
• Data polling and Toggle Protocol for EPC
Status
• Internal Power-On detection circuit
– Memory Erase in blocks
• One 16K Byte, two 8K Byte, one 32K Byte,
seven 64K Byte blocks
• Each block can be erased separately
(1.5 second typical)
• Chip erase (8.5 second typical)
• Each block can be separately protected
against programming and erasing
• Each protected block can be temporary unpro-
tected
• When enabled, the read protection prevents
access to data in Flash memory using a pro-
gram running out of the Flash memory space.
Access to data of internal Flash can only be per-
formed with an inner protected program
– Erase Suspend and Resume Modes
• Read and Program another Block during erase
suspend
– Single Voltage operation , no need of dedicated
supply pin
– Low Power Consumption:
• 45mA max. Read current
• 60mA max. Program or Erase current
• Automatic Stand-by-mode (50µA maximum)
– 100,000 Erase-Program Cycles per block,
20 year data retention time
– Operating temperature: -40 to +125oC
5.2 - Operational Overview
Read Mode
In standard mode (the normal operating mode)
the Flash appears like an on-chip ROM with the
same timing and functionality. The Flash module
offers a fast access time, allowing zero waitstate
access with CPU frequency up to 40MHz.
Instruction fetches and data operand reads are
performed with all addressing modes of the
ST10F280 instruction set.
In order to optimize the programming time of the
internal Flash, blocks of 8K Bytes, 16K Bytes,
32K Bytes, 64K Bytes can be used. But the size of
the blocks does not apply to the whole memory
space, see details in Table 2.
Table 2 : 512K Byte Flash Memory Block Organisation
Block
Addresses (Segment 0) Addresses (Segment 1)
0
00’0000h to 00’3FFFh
01’0000h to 01’3FFFh
1
00’4000h to 00’5FFFh
01’4000h to 01’5FFFh
2
00’6000h to 00’7FFFh
01’6000h to 01’7FFFh
3
01’8000h to 01’FFFFh
01’8000h to 01’FFFFh
4
02’0000h to 02’FFFFh
02’0000h to 02’FFFFh
5
03’0000h to 03’FFFFh
03’0000h to 03’FFFFh
6
04’0000h to 04’FFFFh
04’0000h to 04’FFFFh
7
05’0000h to 05’FFFFh
05’0000h to 05’FFFFh
8
06’0000h to 06’FFFFh
06’0000h to 06’FFFFh
9
07’0000h to 07’FFFFh
07’0000h to 07’FFFFh
10
08’0000h to 08’FFFFh
08’0000h to 08’FFFFh
Size (K Byte)
16
8
8
32
64
64
64
64
64
64
64
21/186

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]