STPS30L40CW View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30L40CW Datasheet PDF : 6 Pages
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STPS30L40CG/CT/CW
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Rth (c)
Parameter
Per diode
Total
Coupling
Value
1.60
0.85
0.10
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage cur- Tj = 25°C
rent
Tj = 100°C
VR = VRRM
VF * Forward voltage drop Tj = 25°C
IF = 15 A
Tj = 125°C
IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.330 x IF(AV) + 0.011 IF2(RMS)
Min. Typ. Max. Unit
360 µA
20 50 mA
0.55
V
0.42 0.50
0.74
0.59 0.67
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
12
10
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
8
δ=1
6
4
T
2
IF(av)A
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
18
16
Rth(j-a)=Rth(j-c)
14
12
10
Rth(j-a)=15°C/W
8
6
T
4
2
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100 125 150
2/6
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