STPS30L40CW View Datasheet(PDF) - STMicroelectronics
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STPS30L40CW Datasheet PDF : 6 Pages
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STPS30L40CG/CT/CW
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1.0E-4
Single pulse
1.0E-3
tp(s)
1.0E-2
T
δ=tp/T
1.0E-1
tp
1.0E+0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
IR(mA)
2E+2
1E+2
1E+1
1E+0
Tj=150°C
Tj=100°C
Tj=75°C
1E-1
1E-2
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
C(pF)
2000
1000
F=1MHz
Tj=25°C
500
200
100
1
2
VR(V)
5
10
20
50
3/6
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