STPS30L45CR View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
STPS30L45CR Datasheet PDF : 12 Pages
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STPS30L45C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
0.4 mA
100 200 mA
Tj = 25 °C
IF = 15 A
0.55
VF(1) Forward voltage drop
Tj = 125 °C
Tj = 25 °C
IF = 15 A
IF = 30 A
0.42 0.50
V
0.74
Tj = 125 °C
IF = 30 A
0.59 0.67
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.330 x IF(AV) + 0.011 IF2(RMS)
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(av)(W)
12
δ = 0.1
10
δ = 0.05
δ = 0.2
δ = 0.5
8
δ=1
6
4
T
2
IF(av) (A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20
IF(av)(A)
18
16
Rth(j-a)=Rth(j-c)
14
12
10
Rth(j-a)=15°C/W
8
6
4
T
2
0 δ=tp/T
tp
0
25
Tamb(°C)
50
75
TO-220AB/TO-247/I²PAK/D²PAK
TO-220FPAB
100 125 150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.001
0.01
0.1
0.4
tp(µs)
0.2
Tj(°C)
0
1
10
100
1000
25
50
75
100
125
150
Doc ID 8002 Rev 4
3/12
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