STPS30L45CR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS30L45CR Datasheet PDF : 12 Pages
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Characteristics
STPS30L45C
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
Non repetitive surge peak forward
current versus overload duration
(TO-220FPAB only)
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
1E-2
maximum values, per diode
t(s)
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
140 IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
0
1E-3
maximum values, per diode
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Figure 7.
Relative variation of thermal
Figure 8.
impedance junction to case versus
pulse duration
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.8
0.6 δ = 0.5
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
0.4
δ = 0.2
T
0.2 δ = 0.1
δ=tp/T
1E-1
tp
1E+0
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Figure 9.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
IR(mA)
5E+2
1E+2
1E+1
1E+0
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
C(pF)
2000
1000
500
F=1MHz
Tj=25°C
1E-1
Tj=25°C
200
VR(V)
1E-2
100
0 5 10 15 20 25 30 35 40 45
1
2
VR(V)
5
10
20
50
4/12
Doc ID 8002 Rev 4
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