STPS40170C-Y(2011) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40170C-Y Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS40170C-Y
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current
Tc = 150 °C δ = 0.5
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
Tstg Storage temperature range
Tj Operating junction temperature(1)
dV/dt Critical rate of rise reverse voltage
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance parameters
Symbol
Parameter
170
60
20
40
250
14100
-65 to + 175
-40 to + 175
10000
Value
V
A
A
A
W
°C
°C
V/µs
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
Total
1.2
0.85
°C/W
0.5
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
30
µA
7
30
mA
VF (2) Forward voltage drop
Tj = 25° C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 20 A
IF = 40 A
0.92
0.69 0.75
V
1.00
0.79 0.86
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation : P = 0.64 x IF(AV) + 0.0055 IF2(RMS)
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Doc ID 17960 Rev 1
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