STPS40170C-Y(2011) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40170C-Y Datasheet PDF : 8 Pages
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STPS40170C-Y
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
22
20
d=0.05
d=0.1
d=0.2
d=0.5
d=1
18
16
14
12
10
8
6
T
4
2
IF(AV)(A)
d=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
IF(AV)(A)
22
20
18
16
14
12
10
8
6
T
4
2
d=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(Tj)
1.2 PARM(25 °C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
tp(µs)
0
Tj(°C)
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
IM(A)
250
200
150
100
50
IM
0
1.E-03
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration
t
d =0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
d=0.5
0.6
0.5
0.4 d=0.2
0.3 d=0.1
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
tP(s)
T
d=tp/T
1.E-01
tp
1.E+00
Doc ID 17960 Rev 1
3/7
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