STPS40170C-Y(2011) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STPS40170C-Y Datasheet PDF : 8 Pages
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Characteristics
STPS40170C-Y
Figure 7.
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
IR(µA)
1.E+05
1.E+04
1.E+03
1.E+02
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
1.E+01
Tj=50°C
1.E+00
Tj=25°C
1.E-01
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 8.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
10
1
VR(V)
10
100
1000
Figure 9.
Forward voltage drop versus
forward current
(per diode, low level)
IFM(A)
20
18
16
Tj=125°C
(Maximum values)
14
12
Tj=125°C
(Typical values)
10
8
6
4
Tj=25°C
(Maximum values)
2
VFM(V)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Forward voltage drop versus
forward current
(per diode, high level)
IFM(A)
1000
100
10
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Figure 11. Thermal resistance junction to ambient versus copper surface under tab
Rth(j-a)(°C/W)
80
70
epoxy printed board, FR4, Cu = 35 µm
D²PAK
60
50
40
30
20
10
0
0
SCU(cm²)
5
10
15
20
25
30
35
40
4/7
Doc ID 17960 Rev 1
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