TC1307
Note: Unless otherwise indicated, VIN = 3.8V, CIN = 10 µF ceramic (X5R), COUT = 1 µF ceramic (X5R), ILOAD = 100 µA,
SELECT12 = NC, SELECT34 = VIN, SHDN1/2/3/4 = VIN, TA = 25°C.
Junction temperature (TJ) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
0.80
0.70
VDET = 2.55V
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0.0
2.0
4.0
6.0
8.0
10.0
Sink Current (mA)
FIGURE 2-31: Reset VOL-RES vs. ISINK.
5.97
5.96
ISOURCE = 500 µA
VDET = 6.0V
5.95
5.94
5.93
ISOURCE = 800 µA
5.92
5.91
-40 -25 -10
5 20 35 50 65 80
Junction Temperature (°C)
95 110 125
FIGURE 2-34: Reset
Temperature.
VOH-RES
vs.Junction
0.35
0.3
VDET = 2.55V
0.25
ISINK = 1.2 mA
0.2
0.15
0.1
ISINK = 3.2 mA
0.05
0
-40 -25 -10
5 20 35 50 65 80
Junction Temperature (°C)
95 110 125
FIGURE 2-32: Reset VOL-RES vs. Junction
Temperature.
FIGURE 2-35: Power-Up RESET Timing.
4.00
3.80
3.60
3.40
3.20
3.00
2.80
2.60
2.40
2.20
2.00
0.00
VDET = 3.80V
2.00
4.00
6.00
8.00
Source Current (mA)
10.00
FIGURE 2-33: Reset VOH-RES vs. ISOURCE.
325
VDET = VIN = 3 .8V
300
275
250
225
200
0
25
50
75
100
125
150
Load Current (mA)
FIGURE 2-36: Ground Current vs. Load Current.
DS21702A-page 10
2002 Microchip Technology Inc.