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STP10N65K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP10N65K3 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STF10N65K3, STFI10N65K3,
STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™
Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
Datasheet production data
Features
Order codes
STF10N65K3
STFI10N65K3
STP10N65K3
VDS
650 V
RDS(on)
max
1Ω
ID
PTOT
35 W
10 A
150 W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Applications
Switching applications
3
2
1
TO-220FP
TAB
I2PAKFP
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
* 
6 
AM01476v1
Table 1. Device summary
Order codes
STF10N65K3
STFI10N65K3
STP10N65K3
Marking
10N65K3
Package
TO-220FP
I2PAKFP
TO-220
November 2012
This is information on a product in full production.
Doc ID 15732 Rev 3
Packaging
Tube
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www.st.com
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