STF10N65K3, STFI10N65K3, STP10N65K3
Electrical characteristics
Figure 8.
BVDSS
(norm)
1.10
1.05
Normalized BVDSS vs temperature Figure 9.
AM03925v1
RDS(on)
(Ω)
0.95
ID= 1 mA
0.90
0.85
0.80
Static drain-source on resistance
AM03926v1
VGS= 10 V
1.00
0.75
0.95
0.90
-75 -50 -25 0 25 50 75 100 125 150 TJ(°C)
0.70
0.65
0.60
0 1 2 3 4 5 6 7 ID(A)
Figure 10. Output capacitance stored energy Figure 11. Capacitance variations
Eoss
(µJ)
AM03929v1
C
(pF)
AM03928v1
8
7
6
5
4
3
2
1
0
0 100 200 300 400 500 600 VDS(V)
1000
100
10
1
0.1
1
Ciss
Coss
Crss
10
100 VDS(V)
Figure 12. Gate charge vs gate-source voltage Figure 13. Normalized on-resistance vs
temperature
VGS
(V)
12
VDD=520V
ID=7A
10
8
6
4
AM03927v1
VDS
(V)
500
400
300
200
RDS(on)
(norm)
2.5
2.0
1.5
1.0
ID= 1.2 A
AM03931v1
2
100
0.5
0
0
0
10 20 30 40 50 Qg(nC)
0.0
-50 -25 0 25 50 75 100 125 150 TJ(°C)
Doc ID 15732 Rev 3
7/17