STP10N65K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP10N65K3
(Rev.:2012)

N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

STMicroelectronics 

Electrical characteristics

STF10N65K3, STFI10N65K3, STP10N65K3

Figure 14. Normalized gate threshold voltage Figure 15. Maximum avalanche energy vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

ID= 100 µA

AM03930v1

0.90

0.80

0.70

-50 -25 0 25 50 75 100 125 150 TJ(°C)

EAS

(mJ)

220

200

180

160

140

120

100

80

60

40

20

0

0

ID=7.2 A

VDD=50 V

AM03933v1

20 40 60 80 100 120 140 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

VSD

(V)

0.9

TJ=-50°C

AM03932v1

0.8

TJ=25°C

0.7

0.6

TJ=150°C

0.5

0.4

0.3

0 1 2 3 4 5 6 7 8 ISD(A)

8/17

Doc ID 15732 Rev 3

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