STP10N65K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP10N65K3
(Rev.:2012)

N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

STMicroelectronics 

STF10N65K3, STFI10N65K3, STP10N65K3

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (1)

PTOT

IAR

EAS

dv/dt (3)

Drain source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

Single pulse avalanche energy (2)

Derating factor

Peak diode recovery voltage slope

ESD

Gate-source human body model (R = 1.5 kΩ, C =

100 pF)

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s;TC=25 °C)

Tj Operating junction temperature

Tstg Storage temperature

1. Pulse width limited by safe operating area.

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V

3. ISD ≤ 10 A, di/dt = 100 A/µs, VPeak < V(BR)DSS

Value

TO-220FP

I2PAKFP

TO-220

650

± 30

10

6.3

40

35

150

7.2

212

0.28

1.2

12

2.8

2500

-55 to 150

Unit

V

V

A

A

A

W

A

mJ

W/°C

V/ns

kV

V

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Value

TO-220FP

I2PAKFP

TO-220

3.57

0.83

62.5

Unit

°C/W

°C/W

Doc ID 15732 Rev 3

3/17

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