STP10N65K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STP10N65K3
(Rev.:2012)

N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STF10N65K3, STFI10N65K3, STP10N65K3

(Tcase = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = 650 V

drain current (VGS = 0) VDS = 650 V, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

Gate threshold voltage VDS = VGS, ID = 100 µA

Static drain-source on-

resistance

VGS = 10 V, ID = 3.6 A

Min. Typ. Max. Unit

650

V

1 µA

50 µA

±10 µA

3

4.5 V

0.75

1

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Ciss

Coss

Crss

Coss eq.

RG

Qg

Qgs

Qgd

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0

Intrinsic gate resistnce f=1 MHz open drain

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 7.2 A,

VGS = 10 V

(see Figure 18)

Min. Typ. Max. Unit

1180

pF

-

125

- pF

14

pF

-

77

- pF

-

3

-

Ω

42

nC

-

7.4

- nC

23

nC

4/17

Doc ID 15732 Rev 3

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