STM8S003K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S003K3
(Rev.:2012)

Value line, 16 MHz STM8S 8-bit MCU, 8 Kbytes Flash, 128 bytes data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C

STMicroelectronics 

Electrical characteristics

STM8S003K3 STM8S003F3

(1) C is approximately equivalent to 2 x crystal Cload.

(2) The oscillator selection can be optimized in terms of supply current using a high quality resonator with

small Rm value. Refer to crystal manufacturer for more details

(3) Data based on characterization results, not tested in production.

(4) tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 16

MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary

significantly with the crystal manufacturer.

Figure 18: HSE oscillator circuit diagram

Rm

Lm CO

Cm

Resonator

CL1

OSCIN

Resonator

CL2

OSCOUT

f HSE to core

RF

gm

Consumption

control

STM8

HSE oscillator critical g m equation

gmcrit= (2 × Π × fHSE)2 × Rm(2Co + C)2

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)

CL1= CL2 = C: Grounded external capacitance

gm >> gmcrit

9.3.4 Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

Symbol

fHSI

Parameter

Frequency

Table 33: HSI oscillator characteristics

Conditions

Min

Typ Max

16

Unit

MHz

62/100

DocID018576 Rev 3

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