STM8S003K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STM8S003K3
(Rev.:2012)

Value line, 16 MHz STM8S 8-bit MCU, 8 Kbytes Flash, 128 bytes data EEPROM, 10-bit ADC, 3 timers, UART, SPI, I²C

STMicroelectronics 

Electrical characteristics

STM8S003K3 STM8S003F3

(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

9.3.6 I/O port pin characteristics

Symbol

VIL

VIH

Vhys

General characteristics

Subject to general operating conditions for VDD and TA unless otherwise specified. All unused

pins must be kept at a fixed voltage: using the output mode of the I/O for example or an

external pull-up or pull-down resistor.

Table 37: I/O static characteristics

Parameter

Conditions

Min Typ Max

Unit

Input low level voltage

VDD = 5 V

Input high level voltage

-0.3 V

0.7 x

VDD

0.3 x

VDD

V

VDD +

0.3

Hysteresis(1)

700

mV

Rpu

Pull-up resistor

VDD = 5 V, VIN = VSS 30

55 80

kΩ

tR, tF

Rise and fall time

(10 % - 90 %)

Fast I/Os

Load = 50 pF

Standard and high sink

I/Os

Load = 50 pF

20 (2)

ns

125 (2)

Ilkg

Digital input leakage current VSS ≤ VIN ≤VDD

±1 (2)

μA

Ilkg ana

Analog input leakage current VSS ≤ VIN ≤ VDD

±250 (2) nA

Ilkg(inj)

Leakage current in adjacent Injection current ±4 mA

I/O

±1 (2)

μA

(1) Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not

tested in production.

(2)Data based on characterisation results, not tested in production.

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DocID018576 Rev 3

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