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STM8S003K3(2012) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STM8S003K3 Datasheet PDF : 100 Pages
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STM8S003K3 STM8S003F3
Electrical characteristics
Flash program memory and data EEPROM
Table 36: Flash program memory and data EEPROM
Symbol Parameter
Conditions
Min
Typ Max
(1)
VDD
Operating voltage (all
modes, execution/
fCPU ≤ 16 MHz 2.95
5.5
write/erase)
tprog
Standard programming time
(including erase) for
byte/word/block (1 byte/
4 bytes/64 bytes)
6 6.6
Fast programming time for
1 block (64 bytes)
3 3.33
terase
NRW
Erase time for 1 block
(64 bytes)
Erase/write cycles(2)
(program memory)
Erase/write cycles(2)
(data memory)
TA = 85 °C
3 3.33
100
100 k
tRET
Data retention (program
memory) after 100
20
erase/write cycles at TA =
85 °C
Data retention (data
TRET = 55°C
memory) after 10 k
20
erase/write cycles at TA =
85 °C
Data retention (data
memory) after 100 k
erase/write cycles at TA =
TRET = 85°C
1
85 °C
IDD
Supply current (Flash
programming or erasing
2
for 1 to 128 bytes)
Unit
V
ms
cycles
years
mA
DocID018576 Rev 3
65/100

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